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| DSEP 8-03AS HiPerFREDTM Epitaxial Diode with soft recovery IFAVM = 8 A VRRM = 300 V trr = 30 ns VRSM V 300 VRRM V 300 Type DSEP 8-03AS Marking on product 8P030AS A C TO-252AA (DPAK) Anode Anode Cathode (Flange) Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot Weight Conditions TVJ = TVJM TC = 152C; rectangular, d = 0.5 tP < 10 s; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 2 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 20 8 12 60 0.5 0.2 -40...+175 175 -40...+150 A A A A mJ A C C C W g Features * * * * * Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Applications * Anti saturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages TC = 25C typ. 60 0.3 Symbol IR VF RthJC trr IRM Conditions VR = VRRM; TVJ = 25C VR = VRRM; TVJ = 150C IF = 8 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 60 0.25 1.13 1.69 2.5 A mA V V K/W ns * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling IF = 1 A; -di/dt = 50 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 12 A; -diF/dt = 100 A/s TVJ = 100C 30 2 2.4 Dimensions see Outlines.pdf A IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions (c) 2004 IXYS All rights reserved 1-2 432 DSEP 8-03AS 30 A IF 20 TVJ =150C TVJ =100C TVJ = 25C 200 10 100 Qr IF = 20A IF = 10A IF = 5A 5 300 400 TVJ = 100C nC VR = 150V IRM 10 IF = 20A IF = 10A IF = 5A A 15 TVJ = 100C VR = 150V 0 0.0 0.5 1.0 1.5 VF 2.0 V 0 100 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt Fig. 1 Forward current IF versus VF 1.4 Fig. 2 Reverse recovery charge Qr versus -diF/dt 70 TVJ = 100C ns VR = 150V Fig. 3 Peak reverse current IRM versus -diF/dt 16 TVJ = 100C V tfr 12 VFR 8 VFR IF = 10A 0.8 s 0.6 tfr 0.4 1.2 Kf 1.0 IRM Qr 0.8 trr 60 IF = 20A IF = 10A IF = 5A 50 40 4 0.2 0.6 0 40 80 120 C 160 TVJ 30 0 200 400 600 -diF/dt 800 A/s 1000 0 0 200 400 0.0 600 A/s 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 10 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 1.449 0.558 0.493 ti (s) 0.005 0.0003 0.017 1 ZthJC 0.1 1 2 3 0.01 0.001 0.00001 DSEP 8-03A 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions 432 (c) 2004 IXYS All rights reserved 2-2 |
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